Datasheet > VS-8TQ080STRRPBF

VS-8TQ080STRRPBF

更新时间： 2024-11-01 15:57:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	149K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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VS-8TQ080STRRPBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	R-PSSO-G2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.68	Base Number Matches：	1

VS-8TQ080STRRPBF 数据手册

VS-8TQ080SPbF, VS-8TQ100SPbF

Vishay High Power Products

Schottky Rectifier, 8 A

FEATURES

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

Base

cathode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

D²PAK

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

PRODUCT SUMMARY

DESCRIPTION

I_F(AV)

8 A

80 V/100 V

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

V_R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

Rectangular waveform

Range

VALUES

UNITS

80/100

850

t_p= 5 μs sine

V_F

8 Apk, T_J= 125 °C

Range

0.58

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-8TQ080SPbF

VS-8TQ100SPbF

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

850

I_FSM

230

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Document Number: 94266

Revision: 15-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7

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与VS-8TQ080STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-8TQ100G-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-8TQ100GSPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND
VS-8TQ100GSTRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, HALOGEN FREE AND
VS-8TQ100-N3	VISHAY	获取价格	Schottky Rectifier
VS-8TQ100PBF	VISHAY	获取价格	Schottky Rectifier
VS-8TQ100SHM3	VISHAY	获取价格	High Performance Schottky Rectifier, 8 A
VS-8TQ100S-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ100SPbF	VISHAY	获取价格	Schottky Rectifier
VS-8TQ100STRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ100STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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