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VS-8S2TH06FP

更新时间： 2024-01-18 15:59:33
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 127K
描述
Rectifier Diode, 8A, 600V V(RRM),

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VS-8S2TH06FP 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.82
Is Samacsys：N二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.8 V最大非重复峰值正向电流：100 A
最高工作温度：175 °C最大输出电流：8 A
最大重复峰值反向电压：600 V最大反向恢复时间：0.025 µs
子类别：Rectifier Diodes表面贴装：NO
Base Number Matches：1

VS-8S2TH06FP 数据手册

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VS-8S2TH06FP  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, extremely low Qrr  
• 175 °C maximum operating junction temperature  
• High frequency PFC CCM operation  
• Low leakage current  
1
2
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified for industrial level  
2L TO-220 FULL-PAK  
DESCRIPTION  
VS-8S2TH06FP 600 V series are the state of the art  
tandem hyperfast recovery rectifiers: excellent switching  
performance and extremely low forward voltage drop trade  
off is overcome, boosting overall application performance.  
Specially designed for CCM PFC application, these devices  
show incomparable performance in every current intensive  
hard switching application.  
PRODUCT SUMMARY  
Package  
2L TO-220FP  
8 A  
IF(AV)  
VR  
600 V  
Optimized reverse recovery stored charge enables  
downsizing of boosting switch and cooling system,  
increased operating frequency make possible use of smaller  
reactive elements. Cost effective PFC application is then  
possible with high efficiency over wide input voltage range  
and loading factor.  
VF at IF  
2.4 V  
trr (typ.)  
TJ max.  
Diode variation  
See Recovery table  
175 °C  
Doubler  
Plastic insulated package features easy mounting together  
with not insulated parts.  
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES  
PARAMETER  
SYMBOL  
VRRM  
IF  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Repetitive peak reverse voltage  
DC forward current  
V
50 % duty cycle, rect. waveforms, TC = 93 °C  
TC = 25 °C  
8
A
Non-repetitive peak surge current  
Operating junction and storage temperatures  
IFSM  
100  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 8 A  
-
-
-
-
-
-
-
2.1  
1.7  
1.6  
< 1  
7
2.4  
2
V
Forward voltage  
VF  
IF = 8 A, TJ = 125 °C  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
1.8  
10  
80  
100  
-
Reverse leakage current  
Junction capacitance  
IR  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
μA  
pF  
27  
12  
CT  
Document Number: 94553  
Revision: 19-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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