5秒后页面跳转
捷配首页

Datasheet > VS-8TQ080-N3
VS-8TQ080-N3 PDF预览

VS-8TQ080-N3

更新时间： 2024-11-02 01:07:59
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
8页 180K
描述
Schottky Rectifier

阅读下载

中文翻译

获取价格

VS-8TQ080-N3 技术参数

生命周期：Obsolete包装说明：R-PSFM-T2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.31其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.88 V
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
最大非重复峰值正向电流：850 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大重复峰值反向电压：80 V最大反向电流：550 µA
表面贴装：NO技术：SCHOTTKY
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED

VS-8TQ080-N3 数据手册

 浏览型号VS-8TQ080-N3的Datasheet PDF文件第2页浏览型号VS-8TQ080-N3的Datasheet PDF文件第3页浏览型号VS-8TQ080-N3的Datasheet PDF文件第4页浏览型号VS-8TQ080-N3的Datasheet PDF文件第5页浏览型号VS-8TQ080-N3的Datasheet PDF文件第6页浏览型号VS-8TQ080-N3的Datasheet PDF文件第7页 
VS-8TQ...PbF Series, VS-8TQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 8 A  
FEATURES  
Base  
• 175 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
TO-220AC  
Cathode Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
8 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
60 V, 80 V, 100 V  
0.58 V  
DESCRIPTION  
VF at IF  
The VS-8TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Rectangular waveform  
Range  
A
V
60 to 100  
850  
tp = 5 μs sine  
8 Apk, TJ = 125 °C  
Range  
A
VF  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-  
8TQ060PbF  
VS-  
8TQ060-N3  
VS-  
8TQ080PbF  
VS-  
8TQ080-N3  
VS-  
8TQ100PbF  
VS-  
8TQ100-N3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC  
reverse voltage  
VR  
60  
60  
80  
80  
100  
100  
V
Maximum working  
peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Following any rated load  
condition and with rated  
IFSM  
A
VRRM applied  
230  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 29-Aug-11  
Document Number: 94265  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

中文翻译

下载PDF

与VS-8TQ080-N3相关器件

型号 品牌 获取价格 描述 数据表
VS-8TQ080PBF VISHAY

获取价格

 		DIODE RECTIFIER DIODE, Rectifier Diode
VS-8TQ080SHM3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080SHM3, VS-8TQ100SHM3 VISHAY

获取价格

 		High Performance Schottky Rectifier, 8 A
VS-8TQ080S-M3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080SPBF VISHAY

获取价格

 		Schottky Rectifier
VS-8TQ080STRLHM3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRL-M3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRLPBF VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, D2PAK-3
VS-8TQ080STRRHM3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-8TQ080STRR-M3 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2

与VS-8TQ080-N3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证