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VS-8TQ060-M3

更新时间: 2024-11-02 14:54:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 164K
描述
High Performance Schottky Rectifier, 8 A

VS-8TQ060-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:5.73
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.88 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:230 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:60 V最大反向电流:550 µA
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-8TQ060-M3 数据手册

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VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 8 A  
FEATURES  
Base  
cathode  
2
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
1
3
3
Cathode  
Anode  
TO-220AC 2L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
60 V, 80 V, 100 V  
0.58 V  
VF at IF  
RM max.  
DESCRIPTION  
I
7 mA at 125 °C  
175 °C  
The VS-8TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
7.5 mJ  
Package  
TO-220AC 2L  
Single  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
8
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
Range  
60 to 100  
850  
tp = 5 μs sine  
A
8 Apk, TJ = 125 °C  
0.58  
V
TJ  
Range  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-8TQ060-M3  
VS-8TQ080-M3  
VS-8TQ100-M3  
100  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
60  
80  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current,  
see fig. 5  
IF(AV)  
8
A
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Following any rated load  
condition and with rated  
Maximum peak one cycle non-repetitive  
surge current, see fig. 7  
IFSM  
A
VRRM applied  
230  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 28-Feb-2023  
Document Number: 96265  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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