Datasheet > VS-8TQ060-M3

VS-8TQ060-M3

更新时间： 2023-12-06 20:06:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	164K
描述
High Performance Schottky Rectifier, 8 A

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VS-8TQ060-M3 数据手册

VS-8TQ060-M3, VS-8TQ080-M3, VS-8TQ100-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 8 A

FEATURES

Base

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode

Anode

TO-220AC 2L

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified according to JEDEC^®-JESD 47

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_R

60 V, 80 V, 100 V

0.58 V

V_Fat I_F

_RMmax.

DESCRIPTION

7 mA at 125 °C

175 °C

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

E_AS

7.5 mJ

Package

TO-220AC 2L

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

Range

60 to 100

850

t_p= 5 μs sine

8 A_pk, T_J= 125 °C

0.58

T_J

Range

-55 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-8TQ060-M3

VS-8TQ080-M3

VS-8TQ100-M3

100

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current,

see fig. 5

I_F(AV)

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

850

Following any rated load

condition and with rated

Maximum peak one cycle non-repetitive

surge current, see fig. 7

I_FSM

V_RRMapplied

230

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Revision: 28-Feb-2023

Document Number: 96265

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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