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VS-30BQ015TRPBF

更新时间: 2024-10-26 13:15:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管高功率电源
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7页 117K
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VS-30BQ015TRPBF 数据手册

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VS-30BQ015PbF  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
• 125 °C TJ operation (VR < 5 V)  
• Optimized for OR-ing applications  
• Ultralow forward voltage drop  
• High frequency operation  
Cathode  
Anode  
SMC  
• Guard ring for enhanced ruggedness and long term  
reliability  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
SMC  
3 A  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
IF(AV)  
VR  
15 V  
0.3 V  
VF at IF  
IRM  
DESCRIPTION  
50 mA at 100 °C  
125 °C  
The VS-30BQ015PbF surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. The proprietary  
barrier technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in disk drives,  
switching power supplies, converters, freewheeling diodes,  
battery charging, and reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
1.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
1.0 Apk, TJ = 75 °C  
Range  
650  
A
VF  
0.30  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30BQ015PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
15  
25  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 83 °C, rectangular waveform  
50 % duty cycle at TL = 78 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
650  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
75  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 12 mH  
1.5  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 94178  
Revision: 23-Feb-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

VS-30BQ015TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-30BQ015-M3/9AT VISHAY

完全替代

DIODE 4 A, 15 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC,
VS-30BQ015PBF VISHAY

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Schottky Rectifier, 3.0 A
30BQ015TR VISHAY

类似代替

Schottky Rectifier, 3.0 A

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