VS-30BQ100-M3
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
Cathode
Anode
• Halogen-free according to IEC 61249-2-21
definition
SMC
• Small foot print, surface mountable
• High frequency operation
PRODUCT SUMMARY
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Package
SMC
3.0 A
IF(AV)
• Compliant to RoHS directive 2002/95/EC
VR
100 V
0.62 V
DESCRIPTION
VF at IF
IRM
The VS-30BQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
5 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Single die
3.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.0
UNITS
Rectangular waveform
A
V
100
tp = 5 μs sine
3.0 Apk, TJ = 125 °C
Range
800
A
VF
0.62
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-30BQ100-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
100
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50 % duty cycle at TL = 148 °C, rectangular waveform
50 % duty cycle at TL = 138 °C, rectangular waveform
3.0
4.0
Maximum average forward current
IF(AV)
A
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
800
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1.0 A, L = 6 mH
70
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
3.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
Document Number: 93360
Revision: 13-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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