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VS-30CDH06-M3 PDF预览

VS-30CDH06-M3

更新时间: 2024-11-25 14:55:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 177K
描述
Hyperfast Rectifier, 2 x 15 A FRED Pt?

VS-30CDH06-M3 数据手册

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VS-30CDH06-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 15 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr, and  
soft recovery  
eSMP® Series  
SMPD (TO-263AC)  
• 175 °C maximum operating junction  
temperature  
K
• For PFC CRM, snubber operation  
• Low forward voltage drop  
• Low leakage current  
1
2
Top View  
Bottom View  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Anode 1  
Anode 2  
K
• Meets JESD 201 class 2 whisker test  
Cathode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop and ultrafast  
recovery time, and soft recovery.  
3
D
3
D
3D Models  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness, and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
600 V  
These devices are intended for use in PFC, boost, lighting,  
in the AC/DC section of SMPS, freewheeling and clamp  
diodes.  
VR  
VF at IF (TJ = 150 °C)  
1.22 V  
30 ns  
trr  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element and snubbers.  
TJ max.  
175 °C  
Package  
SMPD (TO-263AC)  
Common cathode  
MECHANICAL DATA  
Circuit configuration  
Case: SMPD (TO-263AC)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
600  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per device  
per diode  
Non-repetitive peak surge current, per diode  
30  
(1)  
Average rectified forward current  
IF(AV)  
TC = 130 °C  
TJ = 25 °C, 10 ms sine pulse  
15  
A
IFSM  
160  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX. UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
600  
-
IF = 15 A  
-
-
-
-
-
1.63  
1.22  
-
2.15  
1.65  
20  
V
Forward voltage, per diode  
VF  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current, per diode  
Junction capacitance, per diode  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
500  
-
CT  
16  
Note  
(1)  
Mounted on infinite heatsink  
Revision: 29-Jan-2021  
Document Number: 96625  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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