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VS-30CPQ100G-N3 PDF预览

VS-30CPQ100G-N3

更新时间: 2024-11-24 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 177K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-30CPQ100G-N3 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:240 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:100 V最大反向电流:280 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

VS-30CPQ100G-N3 数据手册

 浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第2页浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第3页浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第4页浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第5页浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第6页浏览型号VS-30CPQ100G-N3的Datasheet PDF文件第7页 
VS-30CPQ1...GPbF Series, VS-30CPQ1...G-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
• 175 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
TO-247AC  
Anode  
Anode  
2
2
1
Common  
cathode  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 15 A  
DESCRIPTION  
IF(AV)  
VR  
80 V, 90 V, 100 V  
0.67 V  
The VS-30CPQ...G... center tap Schottky rectifier has been  
optimized for low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation  
up to 175 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
VF at IF  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
80 to 100  
920  
tp = 5 μs sine  
A
VF  
15 Apk, TJ = 125 °C (per leg)  
0.67  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
30CPQ080GPbF 30CPQ080G-N3 30CPQ090GPbF 30CPQ090G-N3 30CPQ100GPbF 30CPQ100G-N3  
Maximum DC  
reverse voltage  
VR  
80  
80  
90  
90  
100  
100  
V
Maximum working  
peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 140 °C, rectangular waveform  
30  
A
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
920  
Following any rated load  
condition and with rated  
IFSM  
VRRM applied  
240  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
0.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 02-Dec-11  
Document Number: 94185  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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