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VS-30CTH02SPBF PDF预览

VS-30CTH02SPBF

更新时间: 2024-11-27 12:22:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高帧率高马力
页数 文件大小 规格书
9页 175K
描述
Hyperfast Rectifier, 2 x 15 A FRED Pt®

VS-30CTH02SPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:HALOGEN FREE AND ROHS COMPLIANT, TO-220, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.51
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:HFRHP
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-30CTH02SPBF 数据手册

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VS-30CTH02SPbF, VS-30CTH02-1PbF  
Vishay High Power Products  
Hyperfast Rectifier, 2 x 15 A FRED Pt®  
FEATURES  
VS-30CTH02SPbF  
VS-30CTH02-1PbF  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
Common  
Cathode  
Base  
Common  
Cathode  
• Halogen-free according to IEC 61249-2-21  
definition  
2
2
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
2
Common  
Common  
Cathode  
Cathode  
1
3
1
3
Anode  
Anode  
Anode  
Anode  
DESCRIPTION/APPLICATIONS  
D2PAK  
TO-262  
Vishay HPP’s 200 V series are the state of the art hyperfast  
recovery rectifiers designed with optimized performance of  
forward voltage drop and hyperfast recovery time.  
The planar structure and the platinum doped life  
time control,  
guarantee  
the  
best  
overall  
performance, ruggedness and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
PRODUCT SUMMARY  
trr (maximum)  
30 ns  
2 x 15 A  
200 V  
IF(AV)  
VR  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 159 °C  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per diode  
Average rectified forward current  
per device  
15  
IF(AV)  
30  
A
Non-repetitive peak surge current  
IFSM  
TC = 25 °C  
200  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
V
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
300  
-
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 94015  
Revision: 11-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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