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VS-30CTH02-M3 PDF预览

VS-30CTH02-M3

更新时间: 2024-11-25 14:53:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 156K
描述
Hyperfast Rectifier, 2 x 15 FRED Pt?

VS-30CTH02-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:22 weeks
风险等级:1.56其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:HYPER FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.05 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大重复峰值反向电压:200 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:NO
端子面层:Pure Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

VS-30CTH02-M3 数据手册

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VS-30CTH02-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 15 FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
• Designed and qualified according to JEDEC®-JESD 47  
1
2
3
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TO-220AB 3L  
Base  
common cathode  
4
DESCRIPTION / APPLICATIONS  
200 V series are the state of the art hyperfast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and hyperfast recovery time.  
2
Common  
cathode  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
1
3
Anode  
Anode  
VS-30CTH02-M3  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
PRIMARY CHARACTERISTICS  
VR  
200 V  
VF at IF  
0.78 V  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
IF(AV)  
2 x 15 A  
Package  
TO-220AB 3L  
Common cathode  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 159 °C  
TJ = 25 °C  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
200  
15  
V
per diode  
Average rectified forward current  
per device  
IF(AV)  
30  
A
Non-repetitive peak surge current  
IFSM  
200  
Operating junction and storage temperatures  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
200  
-
-
V
-
-
-
-
-
-
0.92  
0.78  
-
1.05  
0.85  
10  
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
5
300  
-
Junction capacitance  
Series inductance  
CT  
LS  
57  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 13-Jan-2022  
Document Number: 96206  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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