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VS-30BQ40TRPBF PDF预览

VS-30BQ40TRPBF

更新时间: 2024-11-20 21:21:27
品牌 Logo 应用领域
威世 - VISHAY 高功率电源光电二极管
页数 文件大小 规格书
6页 92K
描述
40V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, SIMILAR TO DO-214AB, SMC, 2 PIN

VS-30BQ40TRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknown风险等级:5.76
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:2000 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

VS-30BQ40TRPBF 数据手册

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VS-30BQ040PbF  
Vishay High Power Products  
Schottky Rectifier, 3.0 A  
FEATURES  
• Small foot print, surface mountable  
• Very low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long term  
reliability  
Cathode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
SMC  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The VS-30BQ040PbF surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC boards. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
IF(AV)  
3.0 A  
40 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
3.0 Apk, TJ = 125 °C  
Range  
2000  
A
VF  
0.43  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30BQ040PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 118 °C, rectangular waveform  
50 % duty cycle at TL = 110 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
2000  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
110  
6.0  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.0 A, L = 12 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 94179  
Revision: 04-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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