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VS-30BQ100-M3/9AT PDF预览

VS-30BQ100-M3/9AT

更新时间: 2024-11-24 20:11:27
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
7页 128K
描述
DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SMC, SIMILAR TO DO-214AB, 2 PIN, Rectifier Diode

VS-30BQ100-M3/9AT 技术参数

生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:0.82
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:800 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-30BQ100-M3/9AT 数据手册

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VS-30BQ100-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 3 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Small foot print, surface mountable  
• High frequency operation  
SMC  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
SMC  
3.0 A  
IF(AV)  
DESCRIPTION  
VR  
100 V  
0.62 V  
The VS-30BQ100-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC boards. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
VF at IF  
IRM  
5 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
3.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
800  
A
3.0 Apk, TJ = 125 °C  
Range  
0.62  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-30BQ100-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
3.0  
UNITS  
50 % duty cycle at TL = 148 °C, rectangular waveform  
50 % duty cycle at TL = 138 °C, rectangular waveform  
Maximum average forward current  
IF(AV)  
4.0  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
800  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.0 A, L = 6 mH  
70  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
3.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 13-Sep-10  
Document Number: 93360  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-30BQ100-M3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
VS-30BQ100PBF VISHAY

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 100V V(RRM), Silicon, ROHS COMPLIANT, S
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