Datasheet > VS-30BQ040-M3

VS-30BQ040-M3

更新时间： 2024-10-27 14:51:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	124K
描述
High Performance Schottky Rectifier, 3.0 A

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VS-30BQ040-M3 数据手册

VS-30BQ040-M3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 3.0 A

FEATURES

• Very low forward voltage drop

• Guard ring for enhanced ruggedness and long

term reliability

Cathode

Anode

• Small foot print, surface mountable

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMC (DO-214AB)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

3.0 A

40 V

DESCRIPTION

V_R

The VS-30BQ040-M3 surface-mount Schottky rectifier has

been designed for applications requiring low forward drop

and small foot prints on PC boards. Typical applications are

in disk drives, switching power supplies, converters,

freewheeling diodes, battery charging, and reverse battery

protection.

V_Fat I_F

0.46 V

I_RM

T_Jmax.

30 mA at 125 °C

150 °C

E_AS

6.0 mJ

Package

SMC (DO-214AB)

Single



Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

3.0

UNITS

Rectangular waveform

t_p= 5 μs sine

3.0 A_pk, T_J= 125 °C

Range

1600

V_F

0.46

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-30BQ040-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

3.0

UNITS

50 % duty cycle at T_L= 115 °C, rectangular waveform

50 % duty cycle at T_L= 104 °C, rectangular waveform

Maximum average forward current

I_F(AV)

4.0

5 μs sine or 3 μs rect. pulse

1600

Following any rated

load condition and with

rated V_RRMapplied

Maximum peak one cycle 

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.0 A, L = 12 mH

6.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 18-Apr-2019

Document Number: 93332

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-30BQ040-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-30BQ040-M3/9AT	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-30BQ040PBF	VISHAY	获取价格	Schottky Rectifier, 3.0 A
VS-30BQ040TRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 40V V(RRM), Silicon, ROHS COMPLIANT, SI
VS-30BQ060HM3	VISHAY	获取价格	High Performance Schottky Rectifier, 3.0 A
VS-30BQ060HM3/9AT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS
VS-30BQ060-M3	VISHAY	获取价格	Schottky Rectifier
VS-30BQ060PBF	VISHAY	获取价格	Schottky Rectifier, 3.0 A
VS-30BQ060TRPBF	VISHAY	获取价格	Schottky Rectifier, 3.0 A
VS-30BQ100GPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 100V V(RRM), Silicon, ROHS COMPLIANT, S
VS-30BQ100HM3	VISHAY	获取价格	High Performance Schottky Rectifier, 3 A

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