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VS-30BQ100HM3 PDF预览

VS-30BQ100HM3

更新时间： 2024-11-25 14:55:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 123K
描述
High Performance Schottky Rectifier, 3 A

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VS-30BQ100HM3 数据手册

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VS-30BQ100HM3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 3 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Small foot print, surface mountable  
• High frequency operation  
Cathode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Meets JESD 201 class 2 whisker test  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
SMC (DO-214AB)  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
DESCRIPTION / APPLICATIONS  
3D Models  
The VS-30BQ100HM3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC boards. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
100 V  
0.62 V  
VR  
VF at IF  
MECHANICAL DATA  
Case: SMC (DO-214AB)  
Molding compound meets UL 94 V-0 flammability rating  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
IRM  
TJ max.  
5 mA at 125 °C  
175 °C  
EAS  
3.0 mJ  
Package  
SMC (DO-214AB)  
Single  
Circuit configuration  
Polarity: color band denotes cathode end  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
3.0 Apk, TJ = 125 °C  
Range  
800  
A
VF  
0.62  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-30BQ100HM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 148 °C, rectangular waveform  
50 % duty cycle at TL = 138 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
800  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.0 A, L = 6 mH  
70  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
3.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 26-Jul-2021  
Document Number: 94832  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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