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VS-30BQ100HM3/9AT PDF预览

VS-30BQ100HM3/9AT

更新时间: 2024-11-24 21:05:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
7页 128K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, SMC, 2 PIN

VS-30BQ100HM3/9AT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.72其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.9 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:800 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:500 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

VS-30BQ100HM3/9AT 数据手册

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VS-30BQ100HM3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 3 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Small foot print, surface mountable  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AB (SMC)  
• Meets JESD 201 class 2 whisker test  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
Package  
DO-214AB (SMC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
3.0 A  
100 V  
VR  
DESCRIPTION  
VF at IF  
IRM  
0.62 V  
The VS-30BQ100HM3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC boards. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
5 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
3.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
3.0 Apk, TJ = 125 °C  
Range  
800  
A
VF  
0.62  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30BQ100HM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 148 °C, rectangular waveform  
50 % duty cycle at TL = 138 °C, rectangular waveform  
3.0  
4.0  
Maximum average forward current  
IF(AV)  
A
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
800  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.0 A, L = 6 mH  
70  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
3.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 17-Dec-14  
Document Number: 94832  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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