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VS-10TQPBF

更新时间： 2024-11-27 01:09:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 167K
描述
Schottky Rectifier, 10 A

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VS-10TQ...PbF Series, VS-10TQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 10 A  
FEATURES  
Base  
cathode  
• 175 °C TJ operation  
2
• Low forward voltage drop  
• High frequency operation  
• High purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
TO-220AC  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
10 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.49 V  
DESCRIPTION  
VF at IF  
IRM  
The VS-10TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
Single die  
EAS  
13 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
35/45  
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
1050  
A
VF  
0.49  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
SYMBOL  
UNITS  
10TQ035PbF 10TQ035-N3 10TQ040PbF 10TQ040-N3 10TQ045PbF 10TQ045-N3  
Maximum DC reverse voltage  
VR  
35  
35  
40  
40  
45  
45  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 151 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
10  
A
Maximum peak one cycle non-repetitive  
surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1050  
Following any rated load  
condition and with rated  
IFSM  
V
RRM applied  
280  
13  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 6.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2
Revision: 11-Oct-11  
Document Number: 94120  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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