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VS-10TTS08S-M3 PDF预览

VS-10TTS08S-M3

更新时间: 2024-02-05 01:37:46
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
8页 184K
描述
Silicon Controlled Rectifier, 10A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB, D2PAK-3/2

VS-10TTS08S-M3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.62Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:15 mAJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大均方根通态电流:10 A断态重复峰值电压:800 V
重复峰值反向电压:800 V表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

VS-10TTS08S-M3 数据手册

 浏览型号VS-10TTS08S-M3的Datasheet PDF文件第2页浏览型号VS-10TTS08S-M3的Datasheet PDF文件第3页浏览型号VS-10TTS08S-M3的Datasheet PDF文件第4页浏览型号VS-10TTS08S-M3的Datasheet PDF文件第5页浏览型号VS-10TTS08S-M3的Datasheet PDF文件第6页浏览型号VS-10TTS08S-M3的Datasheet PDF文件第7页 
VS-10TTS08S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Thyristor High Voltage Surface Mount Phase Control SCR, 10 A  
2, 4  
Anode  
FEATURES  
4
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• Designed  
JEDEC®-JESD 47  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
and  
qualified  
according  
2
3
1
3
Gate  
Cathode  
1
TO-263AB (D2PAK)  
APPLICATIONS  
• Input rectification (soft start)  
PRODUCT SUMMARY  
Package  
Diode variation  
IT(AV)  
TO-263AB (D2PAK)  
Single SCR  
6.5 A  
• Vishay input diodes, switches and output rectifiers which  
are available in identical package outlines  
DESCRIPTION  
VDRM/VRRM  
800 V  
The VS-10TTS08S-M3 high voltage series of silicon  
controlled rectifiers are specifically designed for medium  
power switching and phase control applications. The glass  
passivation technology used has reliable operation up to  
125 °C junction temperature.  
VTM  
< 1.15 V  
IGT  
15 mA  
TJ  
-40 to +125 °C  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G-10 glass fabric-based epoxy  
with 4 oz. (140 μm) copper  
2.5  
3.5  
A
Aluminum IMS, RthCA = 15 °C/W  
6.3  
9.5  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
14.0  
18.5  
Note  
TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
6.5  
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IRMS  
10  
VRRM/VDRM  
ITSM  
800  
V
A
110  
VT  
6.5 A, TJ = 25 °C  
1.15  
V
dV/dt  
dI/dt  
150  
V/μs  
A/μs  
°C  
100  
TJ  
Range  
-40 to +125  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
VDRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
IRRM/IDRM  
AT 125 °C  
mA  
VS-10TTS08S-M3  
800  
800  
1.0  
Revision: 08-Jul-15  
Document Number: 94891  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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