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VS-10WQ045FNTR-M3

更新时间： 2024-11-27 01:19:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 140K
描述
High Performance Schottky Rectifier, 10 A

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VS-10WQ045FNTR-M3 数据手册

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VS-10WQ045FN-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 10 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular D-PAK outline  
1
3
• Small foot print, surface mountable  
• High frequency operation  
D-PAK (TO-252AA)  
Anode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRODUCT SUMMARY  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
D-PAK (TO-252AA)  
10 A  
IF(AV)  
VR  
45 V  
DESCRIPTION  
VF at IF  
IRM  
0.53 V  
The VS-10WQ045FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
45  
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
400  
A
VF  
0.53  
V
TJ  
-40 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10WQ045FN-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
10  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
400  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
75  
20  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.0  
Revision: 22-Nov-16  
Document Number: 93284  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-10WQ045FNTR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-10WQ045FNTRLPBF VISHAY

完全替代

 DIODE 45 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
VS-10WQ045FNTRRPBF VISHAY

完全替代

 暂无描述
VS-10WQ045FNPBF VISHAY

完全替代

 Schottky Rectifier, 10 A

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