Datasheet > VS-10WQ045FNHM3

VS-10WQ045FNHM3

更新时间： 2023-12-06 20:10:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	141K
描述
High Performance Schottky Rectifier, 10 A

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VS-10WQ045FNHM3 数据手册

VS-10WQ045FNHM3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 10 A

FEATURES

• Low forward voltage drop

Base

cathode

• Guard ring for enhanced ruggedness and

long term reliability

4, 2

• Popular DPAK (TO-252AA) outline

• Small foot print, surface mountable

• High frequency operation

Anode

• AEC-Q101 qualified

DPAK (TO-252AA)

• Meets JESD 201 class 2 whisker test

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

45 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_R

V_Fat I_F

0.53 V

DESCRIPTION

I_RM

T_Jmax.

15 mA at 125 °C

175 °C

The VS-10WQ045FNHM3 surface mount Schottky rectifier

has been designed for applications requiring low forward

drop and small foot prints on PC board. Typical applications

are in disk drives, switching power supplies, converters,

freewheeling diodes, battery charging, and reverse battery

protection.

E_AS

20 mJ

Package

DPAK (TO-252AA)

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

t_p= 5 μs sine

10 A_pk, T_J= 125 °C

Range

400

V_F

0.53

T_J

-40 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-10WQ045FNHM3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

400

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 3 A, L = 4.4 mH

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

3.0

Revision: 03-Aug-2023

Document Number: 94737

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

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与VS-10WQ045FNHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-10WQ045FNHM3_15	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10WQ045FN-M3	VISHAY	获取价格	DIODE 45 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-10WQ045FNPBF	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10WQ045FNTRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-10WQ045FNTRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-10WQ045FNTRL-M3	VISHAY	获取价格	DIODE 45 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-10WQ045FNTRLPBF	VISHAY	获取价格	DIODE 45 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3
VS-10WQ045FNTR-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A
VS-10WQ045FNTRRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-10WQ045FNTRR-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A

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