Datasheet > VS-10UT10FNTR

VS-10UT10FNTR

更新时间： 2024-11-26 19:07:27

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	128K
描述
Rectifier Diode,

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技术参数
数据手册

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VS-10UT10FNTR 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

VS-10UT10FNTR 数据手册

VS-10UT10, VS-10WT10FN

www.vishay.com

Vishay Semiconductors

High Performance Generation 5.0 Schottky Rectifier, 10 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

I-PAK(TO-251AA)

D-PAK(TO-252AA)

• Optimized V_Fvs. I_Rtrade off for high efficiency

Base

cathode

Base

cathode

• Increased ruggedness for reverse avalanche

capability

• RBSOA available

• Negligible switching losses

Cathode

• Submicron trench technology

Anode

Cathode

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

VS-10UT10

VS-10WT10FN

PRODUCT SUMMARY

APPLICATIONS

I-PAK(TO-251AA),

D-PAK (TO-252AA)

• High efficiency SMPS

• High frequency switching

• Output rectification

Package

I_F(AV)

V_R

10 A

100 V

• Reverse battery protection

• Freewheeling

V_Fat I_F

0.66 V

I_RMmax.

T_Jmax.

Diode variation

E_AS

4 mA at 125 °C

175 °C

• DC/DC systems

• Increased power density systems

Single die

54 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

V_RRM

V_F

CHARACTERISTICS

VALUES

100

UNITS

10 Apk, T_J= 125 °C (typical)

Range

0.615

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

VS-10UT10

VS-10WT10FN

SYMBOL

TEST CONDITIONS

T_J= 25 °C

UNITS

Maximum DC reverse voltage

V_R

100

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 159 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

I_F(AV)

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

610

Maximum peak one cycle

non-repetitive surge current

I_FSM

E_AS

I_AR

_RRMapplied ⁽¹⁾

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 3 A, L = 12 mH

110

Non-repetitive avalanche energy

Repetitive avalanche current

Limited by frequency of operation and time pulse duration

so that T_J< T_Jmax. I_ASat T_Jmax. as a function of time pulse

(see fig. 8)

I_ASat

T_Jmax.

Note

(1)

Measured connecting 2 anode pins

Revision: 02-Nov-11

Document Number: 94647

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-10UT10FNTR相关器件

型号	品牌	获取价格	描述	数据表
VS-10UT10FNTRR	VISHAY	获取价格	Rectifier Diode,
VS10VUA1LAM	ROHM	获取价格	VS5V0UA1LAM是小型模件封装的TVS二极管。适合浪涌保护用途。
VS10VUA1LAMTF	ROHM	获取价格	VS5V0UA1LAMTF是适合浪涌保护用途的小型模件封装的TVS二极管。是车载级的高可靠
VS10VUA1LAMTFTR	ROHM	获取价格	Trans Voltage Suppressor Diode,
VS-10WQ045FNHM3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A
VS-10WQ045FNHM3_15	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10WQ045FN-M3	VISHAY	获取价格	DIODE 45 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO TO-252AA
VS-10WQ045FNPBF	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10WQ045FNTRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-252AA, DPAK-3/2
VS-10WQ045FNTRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-252AA, DPAK-3/2

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