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VS10VUA1LAMTFTR PDF预览

VS10VUA1LAMTFTR

更新时间: 2024-11-26 15:57:39
品牌 Logo 应用领域
罗姆 - ROHM 局域网光电二极管
页数 文件大小 规格书
10页 1588K
描述
Trans Voltage Suppressor Diode,

VS10VUA1LAMTFTR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.67
其他特性:HIGH RELIABILITY最大击穿电压:12.3 V
最小击穿电压:11.1 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F2湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL参考标准:AEC-Q101
最大重复峰值反向电压:10 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS10VUA1LAMTFTR 数据手册

 浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第2页浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第3页浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第4页浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第5页浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第6页浏览型号VS10VUA1LAMTFTR的Datasheet PDF文件第7页 
VS10VUA1LAMTF  
Transient Voltage Suppressor  
(AEC-Q101 qualified)  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
ꢀ ꢀ ꢀ  
V
10  
V
W
A
RWM  
P
600  
35.3  
PP  
I
PP  
ꢀ ꢀ ꢀ  
Feature  
Inner Circuit  
High reliability  
Small power mold type  
Application  
Packaging Specification  
Packing  
Surge Protection  
Embossed Tape  
Reel Size(mm)  
180  
12  
3000  
TR  
TapingWidth(mm)  
Basic OrderingUnit(pcs)  
TapingCode  
Structure  
Silicon Epitaxial Planar  
Marking  
W4  
(T = 25)  
Absolute Maximum Rating  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
a
Min. Max.  
Parameter  
PeakPulsePower  
Symbol  
Conditions  
tp=10/1000us  
tp=10/1000us  
Unit  
W
A
P
-
-
-
600  
35.3  
150  
PP  
I
PP  
PeakPulseCurrent  
T
Junctiontemperature  
Storagetemperature  
-
-
j
T
stg  
-55 150  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
©2017 ROHMCo., Ltd.All rights reserved.  
1/6  
2017/07/26_Rev.003  

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