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VS-10ETF12SPBF PDF预览

VS-10ETF12SPBF

更新时间: 2024-10-30 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管快速软恢复二极管高功率电源
页数 文件大小 规格书
8页 225K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3

VS-10ETF12SPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.37
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.33 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:185 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.31 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-10ETF12SPBF 数据手册

 浏览型号VS-10ETF12SPBF的Datasheet PDF文件第2页浏览型号VS-10ETF12SPBF的Datasheet PDF文件第3页浏览型号VS-10ETF12SPBF的Datasheet PDF文件第4页浏览型号VS-10ETF12SPBF的Datasheet PDF文件第5页浏览型号VS-10ETF12SPBF的Datasheet PDF文件第6页浏览型号VS-10ETF12SPBF的Datasheet PDF文件第7页 
VS-10ETF..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A  
FEATURES  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
+
• Designed  
JEDEC®-JESD47  
• Material categorization:  
and  
qualified  
according  
to  
2
For definitions of compliance please see  
www.vishay.com/doc?99912  
2
3
1
3
1
APPLICATIONS  
• Output rectification and freewheeling in inverters,  
choppers and converters  
-
-
Anode  
Anode  
TO-263AB (D2PAK)  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
10 A  
IF(AV)  
DESCRIPTION  
VR  
1000 V, 1200 V  
1.33 V  
The VS-10ETF..SPbF fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.  
VF at IF  
IFSM  
155 A  
trr  
80 ns  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
1000/1200  
155  
A
10 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.33  
V
trr  
80  
ns  
°C  
TJ  
-40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETF10SPbF  
VS-10ETF12SPbF  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
10  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 125 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
130  
A
Maximum peak one cycle non-repetitive  
surge current  
IFSM  
155  
85  
Maximum I2t for fusing  
I2t  
A2s  
120  
Maximum I2t for fusing  
I2t  
1200  
A2s  
Revision: 18-Dec-13  
Document Number: 94094  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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