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VS-10ETS08STRRPBF PDF预览

VS-10ETS08STRRPBF

更新时间: 2024-11-25 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 高电压电源高压二极管
页数 文件大小 规格书
7页 176K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3

VS-10ETS08STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.4
应用:HIGH VOLTAGE POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-10ETS08STRRPBF 数据手册

 浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第2页浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第3页浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第4页浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第5页浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第6页浏览型号VS-10ETS08STRRPBF的Datasheet PDF文件第7页 
VS-10ETS..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 10 A  
FEATURES  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Base  
cathode  
2
• Glass passivated pellet chip junction  
• Designed and qualified according to  
JEDEC®-JESD 47  
2
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
3
1
TO-263AB (D2PAK)  
Anode  
Anode  
APPLICATIONS  
• Input rectification  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
• Vishay switches and output rectifiers which are available  
in identical package outlines  
IF(AV)  
10 A  
800 V, 1000 V, 1200 V  
1.1 V  
VR  
DESCRIPTION  
VF at IF  
IFSM  
The VS-10ETS..SPbF rectifier series has been optimized for  
very low forward voltage drop, with moderate leakage. The  
glass passivation technology used has reliable operation up  
to 150 °C junction temperature.  
160 A  
Tj max.  
Diode variation  
150 °C  
Single die  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
12.0  
16.0  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
800/1200  
160  
A
VF  
10 A, TJ = 25 °C  
1.1  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETS08SPbF  
VS-10ETS10SPbF  
VS-10ETS12SPbF  
800  
1000  
1200  
900  
1100  
1300  
0.5  
Revision: 12-Feb-16  
Document Number: 94338  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-10ETS08STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-10ETS08STRLPBF VISHAY

完全替代

Rectifier Diode, 1 Phase, 1 Element, 10A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP

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