Datasheet > VS-10ETS12SLHM3

VS-10ETS12SLHM3

更新时间： 2024-11-02 14:55:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	174K
描述
High Voltage Surface Mount Input Rectifier Diode, 10 A

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VS-10ETS12SLHM3 数据手册

VS-10ETS12SLHM3

Vishay Semiconductors

www.vishay.com

High Voltage Surface Mount Input Rectifier Diode, 10 A

FEATURES

• Meets MSL level 1, per J-STD-020,

Base

cathode

LF maximum peak of 245 °C

• Glass passivated pellet chip junction

• AEC-Q101 qualified

• Meets JESD 201 class 1A whisker test

• Flexible solution for reliable AC power

rectification

Anode

D²PAK (TO-263AB)

• High surge, low V_Frugged blocking diode for DC charging

stations

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

APPLICATIONS

I_F(AV)

10 A

• Input rectification

V_R

1200 V

1.1 V

• On-board and off-board EV / HEV battery chargers

V_Fat I_F

I_FSM

160 A

150 °C

DESCRIPTION

T_Jmax.

The VS-10ETS12SLHM3 rectifier series has been optimized

for very low forward voltage drop, with moderate leakage.

Package

D²PAK (TO-263AB)

Circuit configuration

Single

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C

common heatsink of 1 °C/W

12.0

16.0

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1200

160

V_F

10 A, T_J= 25 °C

1.1

T_J

-40 to +150

°C

VOLTAGE RATINGS

PART NUMBER

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE

I_RRM

AT 150 °C

PEAK REVERSE VOLTAGE

VS-10ETS12SLHM3

1200

1300

0.5

Revision: 22-Feb-18

Document Number: 96484

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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