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VS-10MQ100HM3/5AT PDF预览

VS-10MQ100HM3/5AT

更新时间: 2024-11-26 20:43:19
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
6页 128K
描述
Rectifier Diode, Schottky, 1 Element, 100V V(RRM), Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO D-64, SMA, 2 PIN

VS-10MQ100HM3/5AT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO D-64, SMA, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.7
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-10MQ100HM3/5AT 数据手册

 浏览型号VS-10MQ100HM3/5AT的Datasheet PDF文件第2页浏览型号VS-10MQ100HM3/5AT的Datasheet PDF文件第3页浏览型号VS-10MQ100HM3/5AT的Datasheet PDF文件第4页浏览型号VS-10MQ100HM3/5AT的Datasheet PDF文件第5页浏览型号VS-10MQ100HM3/5AT的Datasheet PDF文件第6页 
VS-10MQ100HM3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 1 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Small footprint, surface mountable  
• High frequency operation  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Meets JESD 201 class 2 whisker test  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
Package  
DO-214AC (SMA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
1 A  
100 V  
VR  
VF at IF  
IRM  
0.63 V  
DESCRIPTION  
The VS-10MQ100HM3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. Typical  
applications are in disk drives, switching power supplies,  
converters, freewheeling diodes, battery charging, and  
reverse battery protection.  
1 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
1.5 Apk, TJ = 125 °C  
Range  
120  
A
VF  
0.68  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-10MQ100HM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 126 °C, rectangular waveform  
On PC board 9 mm2 island  
1.5  
(0.013 mm thick copper pad area)  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TL = 135 °C, rectangular waveform  
On PC board 9 mm2 island  
1
A
(0.013 mm thick copper pad area)  
Maximum peak one cycle  
non-repetitive surge current, TJ = 25 °C  
See fig. 6  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
120  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
30  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Revision: 02-Apr-15  
Document Number: 94836  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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