Datasheet > VS-10MQ100HM3

VS-10MQ100HM3

更新时间： 2023-12-06 20:01:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	129K
描述
High Performance Schottky Rectifier, 1 A

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VS-10MQ100HM3 数据手册

VS-10MQ100HM3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 1 A

FEATURES

• Low forward voltage drop

• Guard ring for enhanced ruggedness and long

term reliability

Cathode

Anode

• Small footprint, surface mountable

• High frequency operation

SMA (DO-214AC)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Meets JESD 201 class 2 whisker test

• AEC-Q101 qualified

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

1 A

V_R

100 V

0.63 V

V_Fat I_F

DESCRIPTION / APPLICATIONS

I_RM

T_Jmax.

1 mA at 125 °C

150 °C

The VS-10MQ100HM3 surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

E_AS

1.0 mJ

Package

SMA (DO-214AC)

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

100

t_p= 5 μs sine

1.5 A_pk, T_J= 125 °C

Range

120

0.68

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-10MQ100HM3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

100

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

50 % duty cycle at T_L= 126 °C, rectangular waveform

On PC board 9 mm²island

1.5

(0.013 mm thick copper pad area)

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_L= 135 °C, rectangular waveform

On PC board 9 mm²island

(0.013 mm thick copper pad area)

Maximum peak one cycle

non-repetitive surge current, T_J= 25 °C

See fig. 6

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 0.5 A, L = 8 mH

Following any rated

load condition and with

rated V_RRMapplied

120

I_FSM

Non-repetitive avalanche energy

E_AS

I_AR

1.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current

0.5

Revision: 28-Jul-2021

Document Number: 94836

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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