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VS-10ETS08STRR-M3 PDF预览

VS-10ETS08STRR-M3

更新时间: 2024-11-02 01:06:23
品牌 Logo 应用领域
威世 - VISHAY 高压二极管
页数 文件大小 规格书
7页 180K
描述
High Voltage Surface Mount Input Rectifier Diode, 10 A

VS-10ETS08STRR-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:16 weeks风险等级:5.7
应用:HIGH VOLTAGE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:160 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245最大重复峰值反向电压:800 V
最大反向电流:50 µA表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

VS-10ETS08STRR-M3 数据手册

 浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第2页浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第3页浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第4页浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第5页浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第6页浏览型号VS-10ETS08STRR-M3的Datasheet PDF文件第7页 
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 10 A  
FEATURES  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Base  
cathode  
2
• Glass passivated pellet chip junction  
• Designed and qualified according to  
JEDEC®-JESD 47  
2
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
3
1
TO-263AB (D2PAK)  
Anode  
Anode  
APPLICATIONS  
PRODUCT SUMMARY  
• Input rectification  
Package  
TO-263AB (D2PAK)  
• Vishay switches and output rectifiers which are available  
in identical package outlines  
IF(AV)  
10 A  
800 V, 1000 V, 1200 V  
1.1 V  
VR  
DESCRIPTION  
VF at IF  
IFSM  
The VS-10ETS..S-M3 rectifier series has been optimized for  
very low forward voltage drop, with moderate leakage. The  
glass passivation technology used has reliable operation up  
to 150 °C junction temperature.  
160 A  
Tj max.  
Diode variation  
150 °C  
Single die  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
12.0  
16.0  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
800/1200  
160  
A
VF  
10 A, TJ = 25 °C  
1.1  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETS08S-M3  
VS-10ETS10S-M3  
VS-10ETS12S-M3  
800  
1000  
1200  
900  
1100  
1300  
0.5  
Revision: 12-Feb-16  
Document Number: 94888  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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