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VS-10ETF12FPPBF PDF预览

VS-10ETF12FPPBF

更新时间: 2024-11-01 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
8页 223K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-10ETF12FPPBF 技术参数

生命周期:Obsolete包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
其他特性:FREE WHEELING DIODE, UL APPROVED应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.33 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:140 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大重复峰值反向电压:1200 V
最大反向电流:100 µA最大反向恢复时间:0.31 µs
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VS-10ETF12FPPBF 数据手册

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VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 10 A  
FEATURES  
• Glass passivated pellet chip junction  
• 150 °C max. operation junction temperature  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
2
• Fully isolated package (VINS = 2500 VRMS  
)
3
1
1
3
• UL E78996 approved  
TO-220 FULL-PAK  
Available  
• Material categorization:  
for definitions of compliance please see  
Cathode  
Anode  
www.vishay.com/doc?99912  
PRODUCT SUMMARY  
APPLICATIONS  
Package  
TO-220FP  
10 A  
These devices are intended for use in output rectification  
and freewheeling in inverters, choppers and converters as  
well as in input rectification where severe restrictions on  
conducted EMI should be met.  
IF(AV)  
VR  
1000 V, 1200 V  
1.33 V  
VF at IF  
IFSM  
140 A  
trr  
80 ns  
DESCRIPTION  
TJ max.  
Diode variation  
Snap factor  
150 °C  
The VS-10ETF1..FP... fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.   
Single die  
0.6  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
1000 to 1200  
10  
UNITS  
V
Sinusoidal waveform  
A
140  
1 A, 100 A/µs  
80  
ns  
V
VF  
10 A, TJ = 25 °C  
1.33  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETF10FPPbF, VS-10ETF10FP-M3  
VS-10ETF12FPPbF, VS-10ETF12FP-M3  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
10  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 95 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
115  
140  
66  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
94  
Maximum I2t for fusing  
I2t  
940  
A2s  
Revision: 11-Feb-16  
Document Number: 94093  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-10ETF12FPPBF 替代型号

型号 品牌 替代类型 描述 数据表
10ETF12FP VISHAY

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