Datasheet > VS-10ETF12SLHM3

VS-10ETF12SLHM3

更新时间： 2024-11-02 14:55:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	230K
描述
Fast Soft Recovery Rectifier Diode, 10 A

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VS-10ETF12SLHM3 数据手册

VS-10ETF12SLHM3

Vishay Semiconductors

www.vishay.com

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

FEATURES

Base

• Meets MSL level 1, per J-STD-020,

cathode

LF maximum peak of 245 °C

• Glass passivated pellet chip junction

• AEC-Q101 qualified

• Meets JESD 201 class 1A whisker test

• Flexible solution for reliable AC power

rectification

Anode

D²PAK (TO-263AB)

• High surge, low V_Frugged blocking diode for DC charging

stations

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

APPLICATIONS

V_R

1200 V

1.33 V

155 A

80 ns

• Input rectification

V_Fat I_F

I_FSM

• On-board and off-board EV / HEV battery chargers

t_rr

DESCRIPTION

T_Jmax.

150 °C

D²PAK (TO-263AB)

The VS-10ETF12SLHM3 fast soft recovery rectifier series

has been optimized for combined short reverse recovery

time and low forward voltage drop.

Package

Circuit configuration

Snap factor

Single

0.6

The glass passivation ensures stable reliable operation in

the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

V_F

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1200

155

10 A, T_J= 25 °C

1 A, 100 A/μs

Range

1.33

t_rr

°C

T_J

-40 to +150

VOLTAGE RATINGS

PART NUMBER

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE

I_RRM

AT 150 °C

PEAK REVERSE VOLTAGE

VS-10ETF12SLHM3

1200

1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 125 °C, 180° conduction half sine wave

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

130

Maximum peak one cycle non-repetitive

surge current

I_FSM

155

Maximum I²t for fusing

I²t

A²s

120

Maximum I²t for fusing

I²t

1200

A²s

Revision: 22-Feb-18

Document Number: 96486

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-10ETF12SLHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-10ETF12S-M3	VISHAY	获取价格	Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
VS-10ETF12SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-10ETF12STRL-M3	VISHAY	获取价格	Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
VS-10ETF12STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-10ETF12STRR-M3	VISHAY	获取价格	Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
VS-10ETF12STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
VS-10ETF12THM3	VISHAY	获取价格	Rectifier Diode,
VS-10ETF1PBF	VISHAY	获取价格	Fast Soft Recovery Rectifier Diode, 10 A
VS-10ETS08FP-M3	VISHAY	获取价格	High Voltage, Input Rectifier Diode, 10 A
VS-10ETS08FPPBF	VISHAY	获取价格	DIODE GP 800V 10A TO220ACFP

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