Datasheet > VNB20N07(8957)TR

VNB20N07(8957)TR

更新时间： 2024-11-19 19:45:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	482K
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中文翻译

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数据手册

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VNB20N07(8957)TR 数据手册

VNP20N07FI

VNB20N07/VNV20N07

"OMNIFET":

FULLY AUTOPROTECTED POWER MOSFET

TYPE

V_clamp

R_DS(on)

I_lim

VNP20N07FI

VNB20N07

VNV20N07

70 V

0.05 Ω

20 A

■

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

DIAGNOSTIC FEEDBACK THROUGH INPUT

ISOWATT220

■

ESD PROTECTION

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

COMPATIBLE WITH STANDARD POWER

MOSFET

■

D2PAK

TO-263

PowerSO-10

DESCRIPTION

The VNP20N07FI, VNB20N07 and VNV20N07

are

monolithic

devices

made

using

STMicroelectronics VlPower M0 Technology,

intended for replacement of standard power

MOSFETS in DC to 50 KHz applications. Built-in

thermal shut-down, linear current limitation and

overvoltage clamp protect the chip in harsh

enviroments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

BLOCK DIAGRAM ( )

( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

1/13

12 3 4 5 6 7...13

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