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VNB28N04-E PDF预览

VNB28N04-E

更新时间: 2024-11-19 13:15:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
13页 142K
描述
TRANSISTOR,MOSFET,N-CHANNEL,42V V(BR)DSS,28A I(D),TO-263AB

VNB28N04-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.8
配置:Single最大漏极电流 (Abs) (ID):28 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):83 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
Base Number Matches:1

VNB28N04-E 数据手册

 浏览型号VNB28N04-E的Datasheet PDF文件第2页浏览型号VNB28N04-E的Datasheet PDF文件第3页浏览型号VNB28N04-E的Datasheet PDF文件第4页浏览型号VNB28N04-E的Datasheet PDF文件第5页浏览型号VNB28N04-E的Datasheet PDF文件第6页浏览型号VNB28N04-E的Datasheet PDF文件第7页 
VNP28N04FI  
VNB28N04/VNV28N04  
”OMNIFET”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
Vclamp  
RDS(on)  
Ilim  
VNP28N04FI  
VNB28N04  
VNV28N04  
42 V  
42 V  
42 V  
0.035 Ω  
0.035 Ω  
0.035 Ω  
28 A  
28 A  
28 A  
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
ISOWATT220  
3
2
1
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
10  
3
1
1
D2PAK  
TO-263  
PowerSO-10  
DESCRIPTION  
The VNP28N04FI, VNB28N04 and VNV28N04  
are  
monolithic  
devices  
made  
using  
STMicroelectronics VIPower M0 Technology,  
intended for replacement of standard power  
MOSFETS in DC to 50 KHz applications. Built-in  
thermal shut-down, linear current limitation and  
overvoltage clamp protect the chip in harsh  
enviroments.  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
BLOCK DIAGRAM ( )  
( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB  
June 1998  
1/13  

VNB28N04-E 替代型号

型号 品牌 替代类型 描述 数据表
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