是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 28 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e3 |
湿度敏感等级: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 83 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VNB28N04TR-E | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,42V V(BR)DSS,28A I(D),TO-263AB | |
VNB2XWT1-1ALDH-XPB1 | Carling Technologies |
获取价格 |
Rocker Switch, 15A, 24VDC, Quick Connect Terminal, Rocker Actuator, Panel Mount, | |
VNB2XWV1-1ALXX-3-XLH2 | Carling Technologies |
获取价格 |
Rocker Switch, 15A, 24VDC, Quick Connect Terminal, Rocker Actuator, Panel Mount, | |
VNB35N07 | STMICROELECTRONICS |
获取价格 |
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | |
VNB35N07-E | STMICROELECTRONICS |
获取价格 |
âOMNIFETâ: FULLY AUTOPROTECTED POWER MOSF | |
VNB35N07TR-E | STMICROELECTRONICS |
获取价格 |
暂无描述 | |
VNB35NV04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VNB35NV0413TR | STMICROELECTRONICS |
获取价格 |
45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2 | |
VNB35NV04-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET | |
VNB35NV04TR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET |