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VNB49N04 PDF预览

VNB49N04

更新时间: 2024-11-05 22:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
14页 135K
描述
“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

VNB49N04 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, D2PAK, TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.8
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
输入特性:SCHMITT TRIGGER接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
长度:10.14 mm功能数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C输出特性:OPEN-DRAIN
输出电流流向:SINK标称输出峰值电流:49 A
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TO-263封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:4.826 mm
表面贴装:YES技术:MOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:2.54 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:24 µs接通时间:3.8 µs
宽度:9.15 mmBase Number Matches:1

VNB49N04 数据手册

 浏览型号VNB49N04的Datasheet PDF文件第2页浏览型号VNB49N04的Datasheet PDF文件第3页浏览型号VNB49N04的Datasheet PDF文件第4页浏览型号VNB49N04的Datasheet PDF文件第5页浏览型号VNB49N04的Datasheet PDF文件第6页浏览型号VNB49N04的Datasheet PDF文件第7页 
VNP49N04FI  
/ VNB49N04 / VNV49N04  
“OMNIFET”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
V
R
I
LIM  
CLAMP  
DS(ON)  
VNP49N04FI  
VNB49N04  
VNV49N04  
42 V  
20 mΩ  
49 A  
ISOWATT220  
n LINEAR CURRENT LIMITATION  
n THERMAL SHUT DOWN  
3
2
1
n SHORT CIRCUIT PROTECTION  
n INTEGRATED CLAMP  
10  
3
1
n LOW CURRENT DRAWN FROM INPUT PIN  
n DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
1
PowerSO-10TM  
TO-263 (D2PAK)  
ORDER CODES:  
n ESD PROTECTION  
n DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
ISOWATT220  
PowerSO-10TM  
VNP49N04FI  
VNV49N04  
VNB49N04  
TO-263 (D2PAK)  
n COMPATIBLE WITH STANDARD POWER  
MOSFET  
MOSFETS from DC up to 50KHz applications.  
Built-in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments.  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
DESCRIPTION  
The VNP49N04FI, VNB49N04, VNV49N04 are  
monolithic  
devices  
designed  
in  
STMicroelectronics VIPower M0 Technology,  
intended for replacement of standard Power  
BLOCK DIAGRAM  
DRAIN  
Overvoltage  
Clamp  
Gate  
Control  
INPUT  
Linear  
Current  
Limiter  
Over  
Temperature  
Status  
SOURCE  
October 1999  
1/14  
1

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