5秒后页面跳转
VNB35NV04TR-E PDF预览

VNB35NV04TR-E

更新时间: 2024-09-17 01:15:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动接口集成电路
页数 文件大小 规格书
27页 561K
描述
OMNIFET II: fully autoprotected Power MOSFET

VNB35NV04TR-E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DDPAK-3/2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:2.2
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
长度:10.2 mm湿度敏感等级:3
功能数量:1端子数量:2
输出电流流向:SINK封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度(摄氏度):260座面最大高度:4.83 mm
标称供电电压:5 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9.15 mm
Base Number Matches:1

VNB35NV04TR-E 数据手册

 浏览型号VNB35NV04TR-E的Datasheet PDF文件第2页浏览型号VNB35NV04TR-E的Datasheet PDF文件第3页浏览型号VNB35NV04TR-E的Datasheet PDF文件第4页浏览型号VNB35NV04TR-E的Datasheet PDF文件第5页浏览型号VNB35NV04TR-E的Datasheet PDF文件第6页浏览型号VNB35NV04TR-E的Datasheet PDF文件第7页 
VNB35NV04-E, VNP35NV04-E,  
VNV35NV04-E  
OMNIFET II: fully autoprotected Power MOSFET  
Datasheet  
-
production data  
Diagnostic feedback through input pin  
ESD protection  
Direct access to the gate of the Power  
10  
MOSFET (analog driving)  
3
Compatible with standard Power MOSFET  
1
1
D2PAK  
PowerSO-10  
Description  
The VNB35NV04-E, VNP35NV04-E and  
VNV35NV04-E are monolithic devices designed  
in STMicroelectronics® VIPower® M0-3  
Technology, intended for replacement of standard  
Power MOSFETs from DC up to 25 kHz  
applications.  
3
2
1
TO-220  
Features  
Built-in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments. Fault feedback can be detected by  
monitoring the voltage at the input pin.  
Type  
RDS(on)  
Ilim  
Vclamp  
VNB35NV04-E  
VNP35NV04-E  
VNV35NV04-E  
10 mΩ(1)  
30 A  
40 V  
1. For PowerSO-10 only  
Linear current limitation  
Thermal shutdown  
Short circuit protection  
Integrated clamp  
Low current drawn from input pin  
Table 1. Device summary  
Order codes  
Package  
Tube  
Tape and reel  
D2PAK  
TO-220  
VNB35NV04-E  
VNP35NV04-E  
VNV35NV04-E  
VNB35NV04TR-E  
PowerSO-10  
VNV35NV04TR-E  
February 2015  
DocID023550 Rev 5  
1/27  
This is information on a product in full production.  
www.st.com  
 

VNB35NV04TR-E 替代型号

型号 品牌 替代类型 描述 数据表
VNB35NV0413TR STMICROELECTRONICS

完全替代

45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2
VNB35NV04-E STMICROELECTRONICS

类似代替

OMNIFET II: fully autoprotected Power MOSFET

与VNB35NV04TR-E相关器件

型号 品牌 获取价格 描述 数据表
VNB49N04 STMICROELECTRONICS

获取价格

“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
VNB49N0413TR ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | TO-263AB
VNC VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC08044A4702JB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC08044A4702KB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC08044A47R0JB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC08044A47R0KB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC10044A4702JB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC10044A4702KB VISHAY

获取价格

Vitreous Wirewound Power Resistors
VNC10044A47R0JB VISHAY

获取价格

Vitreous Wirewound Power Resistors