是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 18 weeks | 风险等级: | 2.2 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PSSO-G2 |
长度: | 10.2 mm | 功能数量: | 1 |
端子数量: | 2 | 输出电流流向: | SINK |
标称输出峰值电流: | 35 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 4.83 mm |
表面贴装: | YES | 端子形式: | GULL WING |
端子节距: | 2.54 mm | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 16 µs |
接通时间: | 800 µs | 宽度: | 9.15 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VNB35N07TR-E | STMICROELECTRONICS |
获取价格 |
暂无描述 | |
VNB35NV04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VNB35NV0413TR | STMICROELECTRONICS |
获取价格 |
45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2 | |
VNB35NV04-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET | |
VNB35NV04TR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET | |
VNB49N04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | |
VNB49N0413TR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | TO-263AB | |
VNC | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A4702JB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A4702KB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors |