是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | ROHS COMPLIANT, D2PAK-2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.81 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 长度: | 10.2 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 2 | 输出电流流向: | SINK |
标称输出峰值电流: | 45 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TO-263 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
认证状态: | Not Qualified | 座面最大高度: | 4.826 mm |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 2.54 mm |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 150 µs | 接通时间: | 12 µs |
宽度: | 9.15 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VNB35NV0413TR | STMICROELECTRONICS |
完全替代 |
45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2 | |
VNB35NV04-E | STMICROELECTRONICS |
类似代替 |
OMNIFET II: fully autoprotected Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VNB35NV0413TR | STMICROELECTRONICS |
获取价格 |
45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2 | |
VNB35NV04-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET | |
VNB35NV04TR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II: fully autoprotected Power MOSFET | |
VNB49N04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | |
VNB49N0413TR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | TO-263AB | |
VNC | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A4702JB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A4702KB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A47R0JB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors | |
VNC08044A47R0KB | VISHAY |
获取价格 |
Vitreous Wirewound Power Resistors |