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VNB35NV04 PDF预览

VNB35NV04

更新时间: 2024-11-18 22:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 接口集成电路驱动
页数 文件大小 规格书
19页 413K
描述
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

VNB35NV04 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, D2PAK-2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.81
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G2
JESD-609代码:e3长度:10.2 mm
湿度敏感等级:1功能数量:1
端子数量:2输出电流流向:SINK
标称输出峰值电流:45 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-263封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified座面最大高度:4.826 mm
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:2.54 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:150 µs接通时间:12 µs
宽度:9.15 mmBase Number Matches:1

VNB35NV04 数据手册

 浏览型号VNB35NV04的Datasheet PDF文件第2页浏览型号VNB35NV04的Datasheet PDF文件第3页浏览型号VNB35NV04的Datasheet PDF文件第4页浏览型号VNB35NV04的Datasheet PDF文件第5页浏览型号VNB35NV04的Datasheet PDF文件第6页浏览型号VNB35NV04的Datasheet PDF文件第7页 
VNB35NV04 / VNP35NV04  
/ VNV35NV04 / VNW35NV04  
®
“OMNIFET II”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
R
I
V
clamp  
DS(on)  
lim  
VNB35NV04  
VNP35NV04  
VNV35NV04  
VNW35NV04  
10  
10 m(*)  
30 A  
40 V  
3
1
1
2
PowerSO-10™  
D PAK  
(*) For PowerSO-10 only  
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
3
3
2
1
2
1
SHORT CIRCUIT PROTECTION  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
TO-220  
TO-247  
ORDER CODES:  
2
VNB35NV04  
VNP35NV04  
VNV35NV04  
VNW35NV04  
D PAK  
TO-220  
PowerSO-10™  
TO-247  
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
intended for replacement of standard Power  
MOSFETS from DC up to 25KHz applications.  
Built in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments. Fault feedback can be detected by  
monitoring the voltage at the input pin.  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
DESCRIPTION  
The VNB35NV04, VNP35NV04, VNV35NV04,  
VNW35NV04 are monolithic devices designed in  
STMicroelectronics VIPower M0-3 Technology,  
BLOCK DIAGRAM  
DRAIN  
2
Overvoltage  
Clamp  
INPUT  
Gate  
Control  
1
Linear  
Current  
Limiter  
Over  
Temperature  
3
SOURCE  
FC01000  
July 2003  
1/19  

VNB35NV04 替代型号

型号 品牌 替代类型 描述 数据表
VNB35NV0413TR STMICROELECTRONICS

完全替代

45A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, D2PAK-2
VNB35NV04-E STMICROELECTRONICS

类似代替

OMNIFET II: fully autoprotected Power MOSFET

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