VNB20N07-E

更新时间： 2024-11-19 12:02:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
13页	491K
描述
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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VNB20N07-E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	18 weeks	风险等级：	2.11
Is Samacsys：	N	Base Number Matches：	1

VNB20N07-E 数据手册

VNP20N07FI

VNB20N07/VNV20N07

"OMNIFET":

FULLY AUTOPROTECTED POWER MOSFET

TYPE

V_clamp

R_DS(on)

I_lim

VNP20N07FI

VNB20N07

VNV20N07

70 V

0.05 Ω

20 A

■

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

DIAGNOSTIC FEEDBACK THROUGH INPUT

ISOWATT220

■

ESD PROTECTION

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

COMPATIBLE WITH STANDARD POWER

MOSFET

■

D2PAK

TO-263

PowerSO-10

DESCRIPTION

The VNP20N07FI, VNB20N07 and VNV20N07

are

monolithic

devices

made

using

STMicroelectronics VlPower M0 Technology,

intended for replacement of standard power

MOSFETS in DC to 50 KHz applications. Built-in

thermal shut-down, linear current limitation and

overvoltage clamp protect the chip in harsh

enviroments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

BLOCK DIAGRAM ( )

( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

1/13

12 3 4 5 6 7...13

中文翻译

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VNB20N07-E 替代型号

型号	品牌	替代类型	描述	数据表
VNB20N07	STMICROELECTRONICS	类似代替	”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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