Datasheet > V12P10HG3/86A

V12P10HG3/86A

更新时间： 2024-11-10 04:21:51

品牌	Logo	应用领域
威世 - VISHAY		PC
页数	文件大小	规格书
5页	105K
描述
DIODE 12 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V12P10HG3/86A 数据手册

New Product

V12P10

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.43 V at I = 5 A

FEATURES

TMBS^®eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• “Green” molding compound (GMC)

TO-277A (SMPC)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

Anode 1

Anode 2

Cathode

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

I_F(AV)

V_RRM

I_FSM

12 A

100 V

200 A

Molding compound meets UL 94V-0 flammability

rating.

E_AS

100 mJ

0.58 V

150 °C

“G” vs. “E” suffix defines molding as none green, “E”,

or green molding compound (GMC) “G”.

V_Fat I_F= 12 A

T_Jmax.

“G” is defined as halogen-free (HF) and antimony-free

molding compound.

TYPICAL APPLICATIONS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and G3 suffix for consumer grade, meets JESD 201

class 1A whisker test, HE3 and HG3 suffix for

high reliability grade (AEC Q101 qualified), meets

JESD 201 class 2 whisker test

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity

protection applications.

Note:

• There is no industry standard for definition of HF, or GMC for

components.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P10

V1210

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

E_AS

_J,T_STG

100

°C

Operating junction and storage temperature range

- 40 to + 150

Document Number: 88981

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与V12P10HG3/86A相关器件

型号	品牌	获取价格	描述	数据表
V12P10HG3/87A	VISHAY	获取价格	DIODE 12 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P10HM3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN
V12P10HM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN
V12P10HM386A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-M3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

与V12P10HG3/86A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P10HG3/86A

V12P10HG3/86A 数据手册

与V12P10HG3/86A相关器件

与V12P10HG3/86A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P10HG3/86A

V12P10HG3/86A 数据手册

与V12P10HG3/86A相关器件

与V12P10HG3/86A相关文章

您还可以找

您在本页遇到什么问题？