Datasheet > V12P12_11

V12P12_11

更新时间： 2024-10-30 08:15:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V12P12_11 数据手册

New Product

V12P12

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.51 V at I_F= 6 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

TO-277A (SMPC)

• AEC-Q101 qualified

Anode 1

Anode 2

Cathode

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

I_F(AV)

12 A

120 V

V_RRM

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free,

commercial grade

I_FSM

150 A

100 mJ

0.63 V

150 °C

E_AS

V_Fat I_F= 12 A

T_Jmax.

RoHS compliant, and

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P12

V1212

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

150

100

Non-repetitive avalanche energy at I_AS= 2.0 A, L = 50 mH, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

0.5

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89094

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V12P12_11相关器件

型号	品牌	获取价格	描述	数据表
V12P12_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-E3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-E3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-G3/86A	VISHAY	获取价格	DIODE 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P12-G3/87A	VISHAY	获取价格	DIODE 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P12HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 120V V(RRM), Silicon, TO-277A, HALOGEN
V12P12HM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 120V V(RRM), Silicon, TO-277A, HALOGEN
V12P12HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-M3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

与V12P12_11相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P12_11

V12P12_11 数据手册

与V12P12_11相关器件

与V12P12_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P12_11

V12P12_11 数据手册

与V12P12_11相关器件

与V12P12_11相关文章

您还可以找

您在本页遇到什么问题？