V12P12-E3/87A

更新时间： 2024-09-13 06:02:55

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
5页	110K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

V12P12-E3/87A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.56	Is Samacsys：	N
Base Number Matches：	1

V12P12-E3/87A 数据手册

New Product

V12P12

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.51 V at I = 6 A

FEATURES

TMBS^®eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

TO-277A (SMPC)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

Anode 1

Anode 2

Cathode

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

• Halogen-free

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

12 A

120 V

150 A

MECHANICAL DATA

Case: TO-277A (SMPC)

E_AS

100 mJ

0.63 V

150 °C

Molding compound meets UL 94V-0 flammability

rating.

V_Fat I_F= 12 A

T_Jmax.

Base P/N-E3 - RoHS compliant, commercial grade

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity

protection applications.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and M3 suffix meets JESD 201 class 1A whisker

test

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P12

V1212

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

150

Non-repetitive avalanche energy

at I_AS= 2.0 A, L = 50 mH, T_J= 25 °C

E_AS

_J,T_STG

100

°C

Operating junction and storage temperature range

- 40 to + 150

Document Number: 89094

Revision: 29-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与V12P12-E3/87A相关器件

型号	品牌	获取价格	描述	数据表
V12P12-G3/86A	VISHAY	获取价格	DIODE 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P12-G3/87A	VISHAY	获取价格	DIODE 12 A, 120 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifi
V12P12HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 120V V(RRM), Silicon, TO-277A, HALOGEN
V12P12HM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 120V V(RRM), Silicon, TO-277A, HALOGEN
V12P12HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-M3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-M3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P12-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

与V12P12-E3/87A相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

99
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

113

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P12-E3/87A

V12P12-E3/87A 技术参数

V12P12-E3/87A 数据手册

与V12P12-E3/87A相关器件

与V12P12-E3/87A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V12P12-E3/87A

V12P12-E3/87A 技术参数

V12P12-E3/87A 数据手册

与V12P12-E3/87A相关器件

与V12P12-E3/87A相关文章

您还可以找

您在本页遇到什么问题？