Datasheet > V12P22

V12P22

更新时间： 2024-11-02 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V12P22 数据手册

V12P22

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.60 V at I_F= 6 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

12 A

200 V

200 A

0.68 V

175 °C

V_RRM

Base P/N-M3

halogen-free, RoHS-compliant, and

I_FSM

commercial grade

Base P/NHM3 - halogen-free, RoHS-compliant and

AEC-Q101 qualified

V_Fat I_F= 12 A (125 °C)

T_Jmax.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPC (TO-277A)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P22

V1222

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.2

Peak forward surge current 8.3 ms single half sine-wave 

superimposed on rated load

I_FSM

200

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1R_JA

Revision: 13-May-2020

Document Number: 87019

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12P22相关器件

型号	品牌	获取价格	描述	数据表
V12P22HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12P22HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12P22-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12P22-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12P45	VISHAY	获取价格	High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12P45HM3	VISHAY	获取价格	Ideal for automated placement
V12P45-M3	VISHAY	获取价格	Ideal for automated placement
V12P45-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P5	ETC	获取价格	Analog IC
V12P6	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr

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