Datasheet > V12P8HM3_A/H

V12P8HM3_A/H

更新时间： 2024-11-30 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	105K
描述
High Current Density Surface Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V12P8HM3_A/H 数据手册

V12P8

www.vishay.com

Vishay General Semiconductor

High Current Density Surface Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.42 V at I_F= 6 A

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMPC (TO-277A)

• AEC-Q101 qualified available

Anode 1

Anode 2

- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

12 A

80 V

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 12 A (T_A= 125 °C)

T_Jmax.

200 A

0.54 V

150 °C

(“_X” denotes revision code e.g. A, B,.....)

Package

SMPC (TO-277A)

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P8

UNIT

Device marking code

V128

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum average forward rectified current (fig. 1)

(2)

I_F

4.3

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 18-Dec-2019

Document Number: 87714

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12P8HM3_A/H相关器件

型号	品牌	获取价格	描述	数据表
V12P8HM3_A/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P8-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
V12P8-M3/86A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P8-M3/87A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P8-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12PL63	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12PM10	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM10_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12PM103	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12PM10HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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