Datasheet > V12PM12

V12PM12

更新时间： 2024-11-30 14:52:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	108K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 6 A

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V12PM12 数据手册

V12PM12

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.53 V at I_F= 6 A

FEATURES

Available

• Very low profile - typical height of 1.1 mm

eSMP Series

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

SMPC (TO-277A)

Anode 1

Anode 2

TYPICAL APPLICATIONS

Cathode

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

click logo to get started

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Models

Case: SMPC (TO-277A)

Available

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

PRIMARY CHARACTERISTICS

I_F(AV)

12 A

120 V

160 A

0.63 V

175 °C

(“_X”) denotes revision code e.g. A, B, .....)

V_RRM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

I_FSM

V_Fat I_F= 12 A

T_Jmax.

Package

SMPC (TO-277A)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12PM12

12M12

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.1

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

160

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Revision: 29-Jan-2019

Document Number: 89938

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12PM12相关器件

型号	品牌	获取价格	描述	数据表
V12PM12_15	VISHAY	获取价格	High Current Density Surface MountTrench MOS Barrier Schottky Rectifier
V12PM12HM3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM12-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM15	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM15HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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