Datasheet > V12PM12_15

V12PM12_15

更新时间： 2024-11-30 01:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
High Current Density Surface MountTrench MOS Barrier Schottky Rectifier

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V12PM12_15 数据手册

V12PM12

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.53 V at I_F= 6 A

FEATURES

Available

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

TO-277A (SMPC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

I_F(AV)

12 A

120 V

160 A

0.63 V

150 °C

V_RRM

I_FSM

V_Fat I_F= 12 A

T_Jmax.

(“_X”) denotes revision code e.g. A, B, .....)

Package

TO-277A (SMPC)

Single die

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Diode variation

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12PM12

12M12

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum DC forward current

(2)

I_F

4.1

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

160

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 14-Apr-15

Document Number: 89938

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12PM12_15相关器件

型号	品牌	获取价格	描述	数据表
V12PM12HM3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM12-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM15	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM153-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM15HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM15HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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