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V12PM6HM3/I PDF预览

V12PM6HM3/I

更新时间: 2024-11-06 02:51:39
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线测试光电二极管
页数 文件大小 规格书
5页 107K
描述
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

V12PM6HM3/I 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.72其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.64 V
JEDEC-95代码:TO-277AJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:4.8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:60 V最大反向电流:1000 µA
反向测试电压:60 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

V12PM6HM3/I 数据手册

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V12PM6  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface-Mount  
TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.39 V at IF = 6 A  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Trench MOS Schottky technology  
K
• Low forward voltage drop, low power losses  
• High efficiency operation  
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
- Automotive ordering code; base P/NHM3  
SMPC (TO-277A)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
K
Anode 1  
Anode 2  
Cathode  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
Available  
MECHANICAL DATA  
Case: SMPC (TO-277A)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
IF(AV)  
12.0 A  
60 V  
VRRM  
-
halogen-free, RoHS-compliant, and  
IFSM  
VF at IF = 12.0 A (TA = 125 °C)  
TJ max.  
200 A  
0.52 V  
175 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 and HM3 suffix meets JESD 201 class 2 whisker test  
Package  
SMPC (TO-277A)  
Single  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V12PM6  
V12M6  
60  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF  
12.0  
Maximum average forward rectified current (fig. 1)  
(2)  
IF  
4.8  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
(3)  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-55 to +175  
°C  
°C  
TSTG  
Notes  
(1)  
(2)  
(3)  
Mounted on 30 mm x 30 mm pad areas aluminum PCB  
Free air, mounted on recommended copper pad area  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ <1/ RJA  
Revision: 24-Oct-2018  
Document Number: 87437  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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