5秒后页面跳转
V12PM12HM3 PDF预览

V12PM12HM3

更新时间: 2024-09-16 01:21:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 97K
描述
Trench MOS Barrier Schottky Rectifier

V12PM12HM3 数据手册

 浏览型号V12PM12HM3的Datasheet PDF文件第2页浏览型号V12PM12HM3的Datasheet PDF文件第3页浏览型号V12PM12HM3的Datasheet PDF文件第4页浏览型号V12PM12HM3的Datasheet PDF文件第5页浏览型号V12PM12HM3的Datasheet PDF文件第6页 
V12PM12-M3, V12PM12HM3  
www.vishay.com  
Vishay General Semiconductor  
High Current Density Surface Mount  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.53 V at IF = 6 A  
FEATURES  
Available  
• Very low profile - typical height of 1.1 mm  
TMBS® eSMP® Series  
• Ideal for automated placement  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-277A (SMPC)  
K
Anode 1  
Anode 2  
Cathode  
TYPICAL APPLICATIONS  
For use in low voltage high frequency DC/DC converters,  
freewheeling, and polarity protection applications.  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
12 A  
120 V  
160 A  
0.63 V  
150 °C  
VRRM  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
IFSM  
commercial grade  
VF at IF = 12 A  
TJ max.  
Base P/NHM3  
automotive grade  
- halogen-free, RoHS-compliant, and  
Package  
TO-277A (SMPC)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Diode variation  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V12PM12  
12M12  
120  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF  
12  
Maximum DC forward current  
(2)  
IF  
4.1  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
160  
A
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Notes  
(1)  
Mounted on 30 mm x 30 mm pad areas aluminum PCB  
Free air, mounted on recommended copper pad area  
(2)  
Revision: 09-Dec-13  
Document Number: 89938  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与V12PM12HM3相关器件

型号 品牌 获取价格 描述 数据表
V12PM12-M3 VISHAY

获取价格

Trench MOS Barrier Schottky Rectifier
V12PM15 VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM153 VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM153HM3/H VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM153HM3/I VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM153-M3/H VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM153-M3/I VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM15HM3/H VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM15HM3/I VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr
V12PM15-M3/H VISHAY

获取价格

High Current Density Surface-Mount TMBS® (Tr