Datasheet > V12PM10_15

V12PM10_15

更新时间： 2024-11-30 01:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	79K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V12PM10_15 数据手册

V12PM10

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.50 V at I_F= 6 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

TO-277A (SMPC)

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

12 A

MECHANICAL DATA

V_RRM

100 V

200 A

0.61 V

150 °C

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_FSM

V_Fat I_F= 15 A (125 °C)

T_Jmax.

Base P/N-M3

commercial grade

Base P/NHM3

halogen-free, RoHS-compliant, and

halogen-free, RoHS-compliant and

Package

TO-277A (SMPC)

Single die

AEC-Q101 qualified

Diode variations

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12PM10

12M10

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

3.8

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended pad area

(2)

Revision: 03-Jul-15

Document Number: 87629

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12PM10_15相关器件

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V12PM103	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12PM10HM3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM10HM3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM10-M3/H	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM10-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V12PM12	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V12PM12_15	VISHAY	获取价格	High Current Density Surface MountTrench MOS Barrier Schottky Rectifier
V12PM12HM3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM12-M3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
V12PM15	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr

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