Datasheet > V12P45-M3

V12P45-M3

更新时间： 2024-10-31 01:23:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
Ideal for automated placement

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数据手册

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V12P45-M3 数据手册

V12P45-M3, V12P45HM3

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.33 V at I_F= 6 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

Available

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

TO-277A (SMPC)

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

12 A

45 V

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 12 A (T_A= 125 °C)

T_Jmax.

200 A

0.41 V

150 °C

- halogen-free, RoHS-compliant, and

Package

TO-277A (SMPC)

Single die

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Diode variation

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P45

UNIT

Device marking code

V1245

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum average forward rectified current (fig. 1)

(2)

I_F

4.3

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

200

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 05-May-15

Document Number: 87715

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V12P45-M3相关器件

型号	品牌	获取价格	描述	数据表
V12P45-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P5	ETC	获取价格	Analog IC
V12P6	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P6HM3_A/H	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P6HM3_A/I	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P6-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
V12P6-M3/86A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P6-M3/87A	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr
V12P6-M3_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P8	VISHAY	获取价格	High Current Density Surface Mount TMBSÂ® (Tr

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