是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-277 |
包装说明: | R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.24 |
其他特性: | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | 应用: | EFFICIENCY |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 0.64 V | JEDEC-95代码: | TO-277A |
JESD-30 代码: | R-PDSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值正向电流: | 200 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -40 °C | 最大输出电流: | 12 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 100 V |
子类别: | Rectifier Diodes | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
V12P10HM3 | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10HM3/86A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10HM3/87A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10HM3_A/H | VISHAY |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN |
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V12P10HM3_A/I | VISHAY |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN |
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V12P10HM386A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10HM3-86A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10HM3-87A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10-M3 | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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V12P10-M3/86A | VISHAY |
获取价格 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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