Datasheet > V12P10HM3

V12P10HM3

更新时间： 2024-11-29 12:16:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	94K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V12P10HM3 数据手册

New Product

V12P10

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.43 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

• Ideal for automatic placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

TO-277A (SMPC)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Anode 1

Anode 2

Cathode

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

12 A

100 V

200 A

V_RRM

I_FSM

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

E_AS

100 mJ

0.58 V

150 °C

V_Fat I_F= 12 A

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

TYPICAL APPLICATIONS

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V12P10

V1210

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

200

100

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

1.0

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Revision: 26-Sep-11

Document Number: 88981

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V12P10HM3相关器件

型号	品牌	获取价格	描述	数据表
V12P10HM3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN
V12P10HM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, TO-277A, HALOGEN
V12P10HM386A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-M3	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-M3/86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V12P10-M3/87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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