Datasheet > US6K2_1

US6K2_1

更新时间： 2024-02-04 19:39:30

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	64K
描述
4V Drive Nch+Nch MOSFET

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中文翻译

获取价格

数据手册

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US6K2_1 数据手册

US6K2

Transistors

4V Drive Nch+Nch MOSFET

US6K2

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

TUMT6

2.0

0.85Max.

0.77

1.3

0.65 0.65

zFeatures

(5)

(6)

(4)

1) Two Nch MOSFETs are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

0~0.1

(3)

(1) (2)

0.3

0.17

Abbreviated symbol : K02

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

3000

US6K2

∗2

∗1

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

1.4

Drain current

Pulsed

∗1

I_DP

I_S

5.6

Source current

(Body diode)

Continuous

0.6

∗1

∗2

Pulsed

I_SP

5.6

W / TOTAL

W / ELEMENT

°C

1.0

Total power dissipation

P_D

0.7

Channel temperature

Tch

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

zThermal resistance

Parameter

Symbol

Limits

125

Unit

°C/W / TOTAL

°C/W / ELEMENT

∗

Channel to ambient

Rth(ch-a)

179

∗ Mounted on a ceramic board

Rev.A

1/3

12 3 4

中文翻译

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与US6K2_1相关器件

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US6K2TR	ROHM	获取价格	暂无描述
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US6K4TR	ROHM	获取价格	1.8V Drive NchNch MOSFET
US6KB80R	SHINDENGEN	获取价格	Silicon Bridge Diodes
US6M1	ROHM	获取价格	4V+2.5V Drive Nch+Nch MOSFET
US6M1_1	ROHM	获取价格	4V+2.5V Drive Nch+Nch MOSFET
US6M11	ROHM	获取价格	1.5V Drive Nch+Pch MOSFET
US6M11_09	ROHM	获取价格	1.5V Drive Nch+Pch MOSFET
US6M1TR	ROHM	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
US6M2	ROHM	获取价格	2.5 Drive Nch+Pch MOS FET